Cho, Jae Yu Kim, SeongYeon Nandi, Raju Jang, Junsung Yun, Hee-Sun Enkhbayar, Enkhjargal Kim, Jin Hyeok Lee, Doh-Kwon Chung, Choong-Heui Kim, JunHo Heo, Jaeyeong 2024-01-19T16:31:09Z 2024-01-19T16:31:09Z 2021-09-02 2020-10-21 2050-7488 https://pubs.kist.re.kr/handle/201004/117981 The highest efficiency of 4.225% for vapor-transport-deposited (VTD) SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is reported. These improved characteristics are attributed to the reduction in interface defects of the heterojunction, which can occur either during the deposition of transparent electrodes or direct annealing of the SnS/CdS heterojunction at 300 degrees C. The enhanced heterojunction interface quality is supported by the substantially reduced dark saturation current density and shunt conductance of the fabricated devices measured under dark conditions. Although the SnS/CdS device exhibits efficiency over 4%, significant short-circuit current loss mainly due to recombination was revealed by quantum efficiency and optical analysis. Admittance analysis shows the presence of numerous defect densities of Sn and S vacancies (>10(17)cm(-3)) in the VTD-grown SnS absorber. Minimizing bulk and interface defect densities of SnS absorbers will be a key issue in achieving high efficiency (>5%) of SnS-based thin-film solar cells. English ROYAL SOC CHEMISTRY TIN SULFIDE SILICON MONOSULFIDE TEMPERATURE PERFORMANCE CU2ZNSNS4 CONTACT DEFECTS LAYER STACK Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality Article 10.1039/d0ta06937j 1 JOURNAL OF MATERIALS CHEMISTRY A, v.8, no.39, pp.20658 - 20665 JOURNAL OF MATERIALS CHEMISTRY A 8 39 20658 20665 scie scopus 000578872600038 2-s2.0-85094318504 Chemistry, Physical Energy & Fuels Materials Science, Multidisciplinary Chemistry Energy & Fuels Materials Science Article TIN SULFIDE SILICON MONOSULFIDE TEMPERATURE PERFORMANCE CU2ZNSNS4 CONTACT DEFECTS LAYER STACK SnS solar cell thin film interface efficiency