Yeo, Inah Kim, Jong Su Song, Jin Dong Han, Il Ki 2024-01-19T16:32:34Z 2024-01-19T16:32:34Z 2021-09-02 2020-10 0957-4522 https://pubs.kist.re.kr/handle/201004/118068 We examined several types of GaAs/Al0.3Ga0.7As quantum dots (QDs) grown by the droplet epitaxy (DE) technique. Using comparative optical analyses using multi-oscillator models, we investigated the individual exciton-phonon coupling channels of several QD types with different temperature dispersions. Each phonon dispersion was calculated for up to three different coupled modes in a phonon field. Nanoscale phonon engineering can exploit the dynamics of exciton-phonon interactions for the design of efficient acousto-excitonic devices and engineered QD single-photon sources. English SPRINGER Carrier-phonon interaction of GaAs/Al0.3Ga0.7 As quantum dots grown by droplet epitaxy Article 10.1007/s10854-020-04183-z 1 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.31, no.19, pp.16338 - 16342 JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31 19 16338 16342 scie scopus 000561074400001 2-s2.0-85089386305 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Engineering Materials Science Physics Article quantum dot carrier-phonon interaction droplet epitaxy