Jeon, Dae-Young 2024-01-19T16:33:53Z 2024-01-19T16:33:53Z 2021-09-02 2020-09-01 2158-3226 https://pubs.kist.re.kr/handle/201004/118146 Junctionless transistors (JLTs) are an attractive candidate for advanced complementary metal oxide semiconductor technologies, but their mode of operation is very different from that of conventional inversion-mode transistors. In this study, we explore the close relationship between the key electrical parameters of JLTs, such as doping concentration (N-d), threshold voltage (V-th), and flat-band voltage (V-fb). The separation between V-fb and V-th in JLTs increases linearly with N-d, and the rate of increase in the separation was affected by the maximum depletion depth (D-max) at given N-d. These findings will enable researchers to estimate simply the N-d or V-fb values of not only JLTs but also JLT-like multi-layer transition metal dichalcogenide-based transistors. English AMER INST PHYSICS NANOWIRE TRANSISTORS EXTRACTION Simple estimation of intrinsic electrical parameters in junctionless transistors Article 10.1063/5.0022769 1 AIP ADVANCES, v.10, no.9 AIP ADVANCES 10 9 scie scopus 000572450500004 2-s2.0-85091498212 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article NANOWIRE TRANSISTORS EXTRACTION junctionless transistors numerical simulation parameter extraction doping concentration flat-band voltage threshold voltage full depletion width