Park, YH Kang, BK Lee, S Woo, DH Kim, SH 2024-01-19T16:38:53Z 2024-01-19T16:38:53Z 2022-03-07 2000 1092-8669 https://pubs.kist.re.kr/handle/201004/118206 To improve the characteristics of optical devices that used be WDM system optimally, we investigated two types of structures that consisted to be a non-uniform thickness quantum well. A possibility of the flat gain in the broad band is presented by optimizing the variation of wells thickness. This structure has different gain characteristics for different sequence of the well from p or n side. Thus, gain characteristics for two types of the structures were calculated to achieve broad range gain flatness for the non-uniform quantum well structure, the spontaneous emission also showed broadband characteristics. They have 3dB bandwidths of spontaneous emission that are 57nm, 50nm respectively. And 3dB bandwidths of structures are 1.4times, 1.3times wider than conventional structure. English IEEE The quantum well property of semiconductor optical amplifier for broadband width Conference 1 International Conference on Indium Phosphide and Related Materials, pp.423 - 426 International Conference on Indium Phosphide and Related Materials 423 426 US WILLIAMSBURG, VA 2000-05-14 2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 000088385200107 Proceedings Paper