Park, Young Ran Eom, Sangwon Kim, Hong Hee Choi, Won Kook Kang, Youngjong 2024-01-19T17:00:22Z 2024-01-19T17:00:22Z 2021-09-02 2020-09 2045-2322 https://pubs.kist.re.kr/handle/201004/118217 Halide vacancy defect is one of the major origins of non-radiative recombination in the lead halide perovskite light emitting devices (LEDs). Hence the defect passivation is highly demanded for the high-performance perovskite LEDs. Here, we demonstrated that FA doping led to the enrichment of Br in Cs(1-x)FA(x)PbBr(3) QDs. Due to the defect passivation by the enriched Br, the trap density in Cs(1-x)FA(x)PbBr(3) significantly decreased after FA doping, and which improved the optical properties of Cs(1-x)FA(x)PbBr(3) QDs and their QD-LEDs. PLQY of Cs(1-x)FA(x)PbBr(3) QDs increased from 76.8% (x = 0) to 85.1% (x = 0.04), and L-max and CEmax of Cs(1-x)FA(x)PbBr(3) QD-LEDs were improved from L-max = 2880 cd m(-2) and CEmax = 1.98 cd A(-1) (x = 0) to L-max = 5200 cd m(-2) and CEmax = 3.87 cd A(-1) (x = 0.04). Cs(1-x)FA(x)PbBr(3) QD-LED device structure was optimized by using PVK as a HTL and ZnO modified with b-PEI as an ETL. The energy band diagram of Cs(1-x)FA(x)PbBr(3) QD-LEDs deduced by UPS analyses. English Nature Publishing Group Self-defect-passivation by Br-enrichment in FA-doped Cs(1-x)FA(x)PbBr(3) quantum dots: towards high-performance quantum dot light-emitting diodes Article 10.1038/s41598-020-71666-8 1 Scientific Reports, v.10, no.1 Scientific Reports 10 1 Y scie scopus 000573254300008 2-s2.0-85090381960 Multidisciplinary Sciences Science & Technology - Other Topics Article HALIDE PEROVSKITES PHOTOLUMINESCENCE NANOCRYSTALS LUMINESCENT EMISSION SURFACE CSPBX3 CL Perovskite LED Self？defect？passivation ­Cs1？xFAxPbBr3 Quantum dots