Jeon, Dae-Young Mouis, Mireille Barraud, Sylvain Ghibaudo, Gerard 2024-01-19T17:00:26Z 2024-01-19T17:00:26Z 2021-09-02 2020-09 0038-1101 https://pubs.kist.re.kr/handle/201004/118222 Junctionless transistors (JLTs) are one of attractive candidates for further scaling down thanks to their promising advantages based on a structural simplicity without PN junctions, and their physical operation is quite different from traditional inversion-mode (IM) transistors. In this paper, we investigated the subthreshold operation of trigate JLTs with various effective width (W-eff) and compared to that of IM transistors. The on current to off current ratio (I-on/I-off) and subthreshold swing (SS) of JLTs were varied dramatically as changing Weff. In addition, a better immunity against short channel effects (SCEs) of JLTs was proven. Physical operation mechanism on the subthreshold regime was also discussed in detail with considering distribution of mobile charge carriers, maximum depletion width, full-depletion mode, bulk neutral and surface accumulation conduction. English PERGAMON-ELSEVIER SCIENCE LTD NANOWIRE TRANSISTORS PERFORMANCE BULK Channel width dependent subthreshold operation of tri-gate junctionless transistors Article 10.1016/j.sse.2020.107860 1 SOLID-STATE ELECTRONICS, v.171 SOLID-STATE ELECTRONICS 171 scie scopus 000572900700010 2-s2.0-85087649105 Engineering, Electrical & Electronic Physics, Applied Physics, Condensed Matter Engineering Physics Article NANOWIRE TRANSISTORS PERFORMANCE BULK Tri-gate junctionless transistors (JLTs) Subthreshold conduction Width variation On current to off current ratio (I-on/I-off) Subthreshold swing (SS) Maximum depletion width