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<dublin_core schema="dc">
<dcvalue element="contributor" qualifier="author">Choi,&#x20;Han-Hyeong</dcvalue>
<dcvalue element="contributor" qualifier="author">Kim,&#x20;Minsung</dcvalue>
<dcvalue element="contributor" qualifier="author">Jang,&#x20;Jingon</dcvalue>
<dcvalue element="contributor" qualifier="author">Lee,&#x20;Keun&#x20;Hyung</dcvalue>
<dcvalue element="contributor" qualifier="author">Jho,&#x20;Jae&#x20;Young</dcvalue>
<dcvalue element="contributor" qualifier="author">Park,&#x20;Jong&#x20;Hyuk</dcvalue>
<dcvalue element="date" qualifier="accessioned">2024-01-19T17:00:36Z</dcvalue>
<dcvalue element="date" qualifier="available">2024-01-19T17:00:36Z</dcvalue>
<dcvalue element="date" qualifier="created">2021-09-02</dcvalue>
<dcvalue element="date" qualifier="issued">2020-09</dcvalue>
<dcvalue element="identifier" qualifier="issn">2352-9407</dcvalue>
<dcvalue element="identifier" qualifier="uri">https:&#x2F;&#x2F;pubs.kist.re.kr&#x2F;handle&#x2F;201004&#x2F;118232</dcvalue>
<dcvalue element="description" qualifier="abstract">Organic&#x20;materials&#x20;show&#x20;promise&#x20;as&#x20;switching&#x20;layers&#x20;for&#x20;resistive&#x20;random&#x20;access&#x20;memory&#x20;(RRAM).&#x20;However,&#x20;practical&#x20;application&#x20;has&#x20;been&#x20;limited&#x20;by&#x20;inefficient&#x20;charge&#x20;injection&#x20;and&#x20;transport&#x20;in&#x20;typical&#x20;organic&#x20;materials.&#x20;This&#x20;study&#x20;proves&#x20;that&#x20;local&#x20;enhancement&#x20;of&#x20;electric&#x20;fields&#x20;through&#x20;structured&#x20;electrodes&#x20;can&#x20;improve&#x20;charge&#x20;injection&#x20;and&#x20;transport&#x20;in&#x20;organic&#x20;RRAM.&#x20;Specifically,&#x20;pyramid-structured&#x20;electrodes&#x20;with&#x20;an&#x20;extremely&#x20;sharp&#x20;tip&#x20;are&#x20;introduced&#x20;into&#x20;RRAM&#x20;with&#x20;a&#x20;polyimide&#x20;(PI)&#x20;switching&#x20;layer.&#x20;The&#x20;electric&#x20;field&#x20;in&#x20;the&#x20;pyramid-structured&#x20;RRAM&#x20;can&#x20;be&#x20;significantly&#x20;enhanced&#x20;only&#x20;at&#x20;the&#x20;tip,&#x20;thereby&#x20;facilitating&#x20;charge&#x20;injection&#x20;at&#x20;the&#x20;electrode&#x2F;PI&#x20;interface&#x20;and&#x20;charge&#x20;transport&#x20;through&#x20;the&#x20;PI&#x20;switching&#x20;layer.&#x20;Indeed,&#x20;the&#x20;resulting&#x20;RRAM&#x20;exhibits&#x20;low&#x20;and&#x20;reliable&#x20;operating&#x20;voltages&#x20;(SET:&#x20;1.76&#x20;V&#x20;+&#x2F;-&#x20;0.41&#x20;V&#x20;&#x2F;&#x20;RESET:&#x20;-0.49&#x20;V&#x20;+&#x2F;-&#x20;0.15&#x20;V)&#x20;compared&#x20;with&#x20;conventional&#x20;PI-based&#x20;RRAMs&#x20;with&#x20;planar&#x20;electrodes.&#x20;The&#x20;conductive&#x20;path&#x20;formed&#x20;in&#x20;the&#x20;tip&#x20;region&#x20;is&#x20;observed&#x20;directly&#x20;using&#x20;conductive&#x20;atomic&#x20;force&#x20;microscopy,&#x20;demonstrating&#x20;that&#x20;resistive&#x20;switching&#x20;occurs&#x20;by&#x20;tip-enhanced&#x20;electric&#x20;fields.&#x20;Also,&#x20;the&#x20;charge&#x20;transport&#x20;mechanism&#x20;follows&#x20;the&#x20;space&#x20;charge-limiting&#x20;current&#x20;model&#x20;modified&#x20;by&#x20;the&#x20;Poole-Frenkel&#x20;effect.&#x20;These&#x20;results&#x20;provide&#x20;an&#x20;effective&#x20;strategy&#x20;to&#x20;control&#x20;the&#x20;charge&#x20;concentration,&#x20;injection,&#x20;and&#x20;transport&#x20;in&#x20;organic&#x20;RRAM,&#x20;for&#x20;realization&#x20;of&#x20;low-cost,&#x20;large-area,&#x20;shape-deformable&#x20;data&#x20;storage&#x20;devices.&#x20;(c)&#x20;2020&#x20;Elsevier&#x20;Ltd.&#x20;All&#x20;rights&#x20;reserved.</dcvalue>
<dcvalue element="language" qualifier="none">English</dcvalue>
<dcvalue element="publisher" qualifier="none">ELSEVIER</dcvalue>
<dcvalue element="title" qualifier="none">Tip-enhanced&#x20;electric&#x20;field-driven&#x20;efficient&#x20;charge&#x20;injection&#x20;and&#x20;transport&#x20;in&#x20;organic&#x20;material-based&#x20;resistive&#x20;memories</dcvalue>
<dcvalue element="type" qualifier="none">Article</dcvalue>
<dcvalue element="identifier" qualifier="doi">10.1016&#x2F;j.apmt.2020.100746</dcvalue>
<dcvalue element="description" qualifier="journalClass">1</dcvalue>
<dcvalue element="identifier" qualifier="bibliographicCitation">APPLIED&#x20;MATERIALS&#x20;TODAY,&#x20;v.20</dcvalue>
<dcvalue element="citation" qualifier="title">APPLIED&#x20;MATERIALS&#x20;TODAY</dcvalue>
<dcvalue element="citation" qualifier="volume">20</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scie</dcvalue>
<dcvalue element="description" qualifier="journalRegisteredClass">scopus</dcvalue>
<dcvalue element="identifier" qualifier="wosid">000598346500014</dcvalue>
<dcvalue element="identifier" qualifier="scopusid">2-s2.0-85087200915</dcvalue>
<dcvalue element="relation" qualifier="journalWebOfScienceCategory">Materials&#x20;Science,&#x20;Multidisciplinary</dcvalue>
<dcvalue element="relation" qualifier="journalResearchArea">Materials&#x20;Science</dcvalue>
<dcvalue element="type" qualifier="docType">Article</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Resistive&#x20;memory</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Charge&#x20;injection&#x20;and&#x20;transport</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Polyimide</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Tip-enhanced&#x20;electric&#x20;field</dcvalue>
<dcvalue element="subject" qualifier="keywordAuthor">Pyramid-structured&#x20;electrode</dcvalue>
</dublin_core>
