Shim, Jaeho Park, Junghoon Kwon, Kyungmok Lee, Kyu Seung Son, Dong Ick Yu, Kyoungsik 2024-01-19T17:01:17Z 2024-01-19T17:01:17Z 2021-09-05 2020-08-01 0167-577X https://pubs.kist.re.kr/handle/201004/118272 The tungsten oxide nonvolatile memory devices were fabricated using the photothermal in-situ oxidation method. The photothermal in-situ oxidation method can monitor the oxidation process in real time. Raman spectra revealed that tungsten oxides were formed by thermal oxidation. The ON/OFF ratio of the current bistability for the device was as large as similar to 10(2) at a 2 V reading voltage, and the cycling endurance of the ON/OFF switching for the devices was stable without noticeable degradation. Memory mechanisms for device are described using fitted the I-V curves. (C) 2020 Elsevier B.V. All rights reserved. English ELSEVIER Tungsten oxide nonvolatile memory devices using photothermal in-situ oxidation method Article 10.1016/j.matlet.2020.127805 1 MATERIALS LETTERS, v.272 MATERIALS LETTERS 272 scie scopus 000535697700017 2-s2.0-85083730498 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article Nonvolatile memory Resistive switching Tungsten oxide Photothermal oxidation