Lee, Ji-Eun Hwang, Jinwoong Kang, Minhee Joo, Hyun-Jeong Ryu, Hyejin Kim, Kyoo Kim, Yongsam Kim, Namdong Anh Tuan Duong Cho, Sunglae Mo, Sung-Kwan Hwang, Choongyu Yang, Imjeong Ho-Soon 2024-01-19T17:01:20Z 2024-01-19T17:01:20Z 2021-09-04 2020-08-01 0169-4332 https://pubs.kist.re.kr/handle/201004/118275 English ELSEVIER ELECTRONIC-STRUCTURE TEMPERATURE PERFORMANCE NITRIDE MODEL A plausible method of preparing the ideal p -n junction interface of a thermoelectric material by surface doping Article 10.1016/j.apsusc.2020.146314 1 APPLIED SURFACE SCIENCE, v.520 APPLIED SURFACE SCIENCE 520 scie scopus 000541405600007 2-s2.0-85083668916 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article ELECTRONIC-STRUCTURE TEMPERATURE PERFORMANCE NITRIDE MODEL Angle-resolved photoemission Charge transfer p-n junction SnSe Tantalum