Lim, Sang-Soon Kim, Kwang-Chon Jeon, Hansol Kim, Ju-Young Kang, Jun-Yun Park, Hyung-Ho Baek, Seung-Hyub Kim, Jin-Sang Kim, Seong Keun 2024-01-19T17:01:52Z 2024-01-19T17:01:52Z 2021-09-05 2020-08 0955-2219 https://pubs.kist.re.kr/handle/201004/118303 The ease of Te sublimation from Bi2Te3-based alloys significantly deteriorates thermoelectric and mechanical properties via the formation of voids. We propose a novel strategy based on atomic layer deposition (ALD) to improve the thermal stability of Bi2Te3-based alloys via the encapsulation of grains with a ZnO layer. Only a few cycles of ZnO ALD over the Bi2Te27Se0.3 powders resulted in significant suppression of the generation of pores in Bi2Te27Se0.3 extrudates and increased the density even after post-annealing at 500 degrees C. This is attributed to the suppression of Te sublimation from the extrudates. The ALD coating also enhanced grain refinement in Bi2Te27Se0.3 extrudates. Consequently, their mechanical properties were significantly improved by the encapsulation approach. Furthermore, the ALD approach yields a substantial improvement in the figure-of-merit after the post-annealing. Therefore, we believe the proposed approach using ALD will be useful for enhancing the mechanical properties of Bi2Te3-based alloys without sacrificing thermoelectric performance. English ELSEVIER SCI LTD P-TYPE (BI,SB)(2)TE-3 THERMOELECTRIC PROPERTIES MECHANICAL-PROPERTIES ELECTRICAL-PROPERTIES RAPID SOLIDIFICATION MICROSTRUCTURE BI2TE3-SB2TE3 COATINGS Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition Article 10.1016/j.jeurceramsoc.2020.04.013 1 JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, v.40, no.10, pp.3592 - 3599 JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 40 10 3592 3599 scie scopus 000528298800012 2-s2.0-85083343764 Materials Science, Ceramics Materials Science Article P-TYPE (BI,SB)(2)TE-3 THERMOELECTRIC PROPERTIES MECHANICAL-PROPERTIES ELECTRICAL-PROPERTIES RAPID SOLIDIFICATION MICROSTRUCTURE BI2TE3-SB2TE3 COATINGS Thermal stability Bi2Te3 Atomic layer deposition Heterogeneous interfaces Te sublimation