Kim, Taeyoon Son, Heerak Kim, Inho Kim, Jaewook Lee, Suyoun Park, Jong Keuk Kwak, Joon Young Park, Jongkil Jeong, YeonJoo 2024-01-19T17:03:20Z 2024-01-19T17:03:20Z 2021-09-05 2020-07-09 2045-2322 https://pubs.kist.re.kr/handle/201004/118390 We report the complementary resistive switching (CRS) behaviors in a tantalum-oxide based resistive switching memory device that reversibly changes its switching mode between bipolar switching (BRS) and CRS in a single memory cell depending on the operation (compliance current) and fabrication (oxygen scavenger layer thickness) conditions. In addition, the origin of the switching mode transition was investigated through electrical and optical measurement, where the conductance is believed to be determined by two factors: formation of conductive filament and modulation of Schottky barrier. This result helps design a resistive switching device with desirable and stable switching behavior. English NATURE PUBLISHING GROUP MECHANISM DEVICE Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM) Article 10.1038/s41598-020-68211-y 1 SCIENTIFIC REPORTS, v.10, no.1 SCIENTIFIC REPORTS 10 1 scie scopus 000548559600008 2-s2.0-85087816478 Multidisciplinary Sciences Science & Technology - Other Topics Article MECHANISM DEVICE neuromorphic Ta2O5 bipolar CRS schottky barrier resistive switching