Jeon, Dae-Young Nam, Deuk Hyeon Lee, Dong Su Lee, Seoung-Ki Park, Min Park, So Jeong Kim, Gyu-Tae 2024-01-19T17:03:40Z 2024-01-19T17:03:40Z 2021-09-04 2020-07-01 0022-3727 https://pubs.kist.re.kr/handle/201004/118411 Ionic-liquid gated multi-layer MoS2 field-effect transistors were fabricated and their electrical properties related to maximum depletion depth, bulk neutral and surface accumulation conduction were investigated in detail. A negative back-gate bias resulted in a depletion of the bulk neutral channel at the bottom interface, which significantly enhanced transistor performance in terms of the on-current to off-current (I-on/I-off) ratio and the off-state current level. The experimental results were verified by numerical simulations and analytical equations. These findings are critical for the optimization of the I-on/I-off ratio of multi-layer MoS2 transistors for energy efficient electronics and low power applications. English IOP PUBLISHING LTD HIGH-PERFORMANCE Tuning the on/off current ratio in ionic-liquid gated multi-layer MoS2 field-effect transistors Article 10.1088/1361-6463/ab84a5 1 JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.53, no.27 JOURNAL OF PHYSICS D-APPLIED PHYSICS 53 27 scie scopus 000533396500001 2-s2.0-85085738325 Physics, Applied Physics Article HIGH-PERFORMANCE multi-layer MoS2 field-effect transistors ionic-liquid back-gate biasing on-current to off-current ratio numerical simulation analytical equations