Cho, Il-Wook Ryu, Mee-Yi Song, Jin Dong 2024-01-19T17:04:08Z 2024-01-19T17:04:08Z 2021-09-05 2020-07 0022-2313 https://pubs.kist.re.kr/handle/201004/118438 The optical properties of InP/InGaP quantum structures (QSs) grown using migration-enhanced molecular beam epitaxy at growth temperatures ranging from 440 to 520 degrees C were investigated using temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopies. As the growth temperature increased from 440 to 520 degrees C, the PL peak energies originating from quantum dots and quantum dashes were blue-shifted, which is attributed to the intermixing of InP and Ga in the InGaP wetting layer. The structural and luminescence properties of InP/InGaP QSs strongly depend on the growth temperatures. The sample grown at 460 degrees C exhibited the strongest PL intensity at room temperature. In addition, as the temperature increased from 10 to 220 K, the PL decay time of the sample grown at 460 degrees C increased up to 100 K and then, gradually decreased up to 220 K. The PL decay times of the sample grown at 520 degrees C increased up to 60 K and then, rapidly decreased up to 120 K. The strongest PL intensity at room temperature and the longest decay time at 100 K for the sample grown at 460 degrees C indicate that the temperature of 460 degrees C is optimal for the formation of the InP/InGaP QSs. English ELSEVIER LUMINESCENCE PROPERTIES DOTS Temperature-dependent carrier dynamics of InP/InGaP quantum structures grown at various growth temperatures using migration-enhanced epitaxy Article 10.1016/j.jlumin.2020.117214 1 JOURNAL OF LUMINESCENCE, v.223 JOURNAL OF LUMINESCENCE 223 scie scopus 000536912800014 2-s2.0-85081666342 Optics Optics Article LUMINESCENCE PROPERTIES DOTS InP/InGaP Quantum structures Photoluminescence Time-resolved photoluminescence