Shin, DS Lee, HN Kim, YT Park, YK Choi, IH 2024-01-19T17:08:44Z 2024-01-19T17:08:44Z 2022-03-07 1999 0272-9172 https://pubs.kist.re.kr/handle/201004/118482 Pt/SrBi2Ta2O9(SBT)/CeO2/Si (MFIS) structures were investigated for observing the change of electrical properties and morphology of interface of Pt/SBT after post-annealing of Pt top electrodes. The morphology of Pt/SBT interface became smooth and Bi oxide was formed at the bottom of Pt top electrode after post-annealing Pt top electrode. In order to describe the origin of these changes, Bi-oxide/Pt/SiO2/Si structure was investigated with annealing temperatures about the reaction between Ei oxide and Pt. We can describe that the smooth interface of Pt/SBT and the consumption of metallic Bi, which the reason why electrical properties were drastically improved, is induced by the melting of Pt-Bi alloys and formation of Bi-oxide after post-annealing Pt top electrode. English MATERIALS RESEARCH SOCIETY The phase transition of Bi-Pt alloys at the interface of Pt/SrBi2Ta2O9 and its effect on interface roughness Conference 1 Symposium on Ferroelectric Thin Films VII, v.541, pp.173 - 178 Symposium on Ferroelectric Thin Films VII 541 173 178 US BOSTON, MA 1998-11-30 FERROELECTRIC THIN FILMS VII 000081716100024 2-s2.0-0032592361 Proceedings Paper