Park, JS Lee, S Ju, BK Jang, J Jeon, D Oh, MH 2024-01-19T17:08:53Z 2024-01-19T17:08:53Z 2022-03-07 1999 https://pubs.kist.re.kr/handle/201004/118492 Electron emission currents and stability in the silicon-tip field emission arrays (FEAs) have bee improved by silicide formation on silicon using Nb (Niobium). The formation of Nb-silicide was confirmed by X-Ray Diffraction (XRD) data. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47V and the emission current fluctuation was decreased from 5% to 2%. English SOCIETY INFORMATION DISPLAY TAIPEI CHAPTER Fabrication and estimation of characteristics for Nb-silicide FEAs Conference 1 5th Asian Symposium on Information Display (ASID 99), pp.49 - 52 5th Asian Symposium on Information Display (ASID 99) 49 52 CH NATL CHIAO TUNG UNIV, HSINCHU, TAIWAN 1999-03-17 ASID'99: PROCEEDINGS OF THE 5TH ASIAN SYMPOSIUM ON INFORMATION DISPLAY 000081835600011 2-s2.0-84896914590 Proceedings Paper