Sun, Keye Gao, Junyi Jung, Daehwan Bowers, John Beling, Andreas 2024-01-19T17:31:04Z 2024-01-19T17:31:04Z 2021-09-05 2020-06-01 0146-9592 https://pubs.kist.re.kr/handle/201004/118538 Low-dark-current waveguide modified uni-traveling carrier photodiodes (PDs) are demonstrated by direct heteroepitaxy of InGaAs/InAlGaAs on silicon templates. The PDs have a dark current of 0.1 mu A at -3 V bias and an internal (external) responsivity of 0.78 A/W (0.27 A/W). The 3 dB bandwidth is 28 GHz, and open eye diagrams are detected at 40 Gbit/s. (C) 2020 Optical Society of America English OPTICAL SOC AMER HIGH-POWER AVALANCHE PHOTODIODES PHOTODETECTOR 40 Gbit/s waveguide photodiode using III-V on silicon heteroepitaxy Article 10.1364/OL.392567 1 OPTICS LETTERS, v.45, no.11, pp.2954 - 2956 OPTICS LETTERS 45 11 2954 2956 scie scopus 000537763300002 2-s2.0-85085854391 Optics Optics Article HIGH-POWER AVALANCHE PHOTODIODES PHOTODETECTOR