Kim, Si Nyeon Chung, Ku Hoon Choi, Jun Woo Lim, Sang Ho 2024-01-19T17:32:30Z 2024-01-19T17:32:30Z 2021-09-05 2020-05-15 0925-8388 https://pubs.kist.re.kr/handle/201004/118618 The manipulation of the bias field of the free-layer in giant magnetoresistance spin-valves is of great importance in sensor applications because this feature dominantly affects the low-field sensitivity of magnetoresistance. In this study, it is demonstrated that the bias field of the free-layer can be manipulated by controlling the thickness of the pinned-layer deposited afterward. The key to success is the utilization of the magnetostatic interactions between the free-poles formed on the Neel walls in both free- and pinned-layers. Magnetostatic interactions play a role in stabilizing the antiparallel magnetization state and hence in suppressing the magnetization switching of the free-layer from an antiparallel to a parallel state. A nearly zero bias field is achieved for a Ta-buffered sample with a pinned-layer thickness of 1.75 nm, where a very high low-field sensitivity of 7.7 mV/mA.Oe is obtained. (C) 2020 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA MAGNETIC-PROPERTIES ENHANCEMENT DEPENDENCE ANISOTROPY SENSORS FILMS GMR Manipulation of free-layer bias field in giant-magnetoresistance spin valve by controlling pinned-layer thickness Article 10.1016/j.jallcom.2020.153727 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.823 JOURNAL OF ALLOYS AND COMPOUNDS 823 scie scopus 000514857400050 2-s2.0-85077735392 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article MAGNETIC-PROPERTIES ENHANCEMENT DEPENDENCE ANISOTROPY SENSORS FILMS GMR Magnetic thin films and multilayers Crystal growth Magnetoresistance Domain structure Magnetic measurements