Son, Myungwoo Chee, Sang-Soo Kim, So-Young Lee, Wonki Kim, Yong Hyun Oh, Byoung-Yun Hwang, Jun Yeon Lee, Byoung Hun Ham, Moon-Ho 2024-01-19T17:34:26Z 2024-01-19T17:34:26Z 2021-09-04 2020-04-15 0008-6223 https://pubs.kist.re.kr/handle/201004/118728 Modulation of the electrical properties of graphene is of significant importance in advancing graphene electronics: it can be achieved by a Fermi level shift induced by electron acceptor/donor doping. Suitable doping methods involving low-temperature processes and offering long-term stability are imperative to practical applications for such materials. Here, we demonstrate a two-step chemical vapor deposition (CVD) technique for direct synthesis of N-doped graphene film from a pyridine feed-stock at 300 degrees C under ambient pressure. We extended the synthesis-classified into nucleation and lateral growth steps-by controlling the carbon partial pressure in the processing gases. This led to large-area, continuous N-doped graphene films of excellent quality with full surface coverage: for example, a film size of 2 in(2), optical transmittance of 97.6%, and electron mobility of 1400 cm(2) V-1 s(-1). Our modified CVD method is expected to facilitate the direct synthesis of N-doped graphene in device manufacturing processes toward practical applications while keeping the underlying devices intact. (C) 2020 Elsevier Ltd. All rights reserved. English PERGAMON-ELSEVIER SCIENCE LTD LOW-TEMPERATURE GROWTH High-quality nitrogen-doped graphene films synthesized from pyridine via two-step chemical vapor deposition Article 10.1016/j.carbon.2019.12.095 1 CARBON, v.159, pp.579 - 585 CARBON 159 579 585 scie scopus 000514195100061 2-s2.0-85077458991 Chemistry, Physical Materials Science, Multidisciplinary Chemistry Materials Science Article LOW-TEMPERATURE GROWTH graphene N doping CVD defect