Park, SM Kim, JM Song, JH Suh, SH 2024-01-19T17:38:19Z 2024-01-19T17:38:19Z 2022-03-07 1998 0277-786X https://pubs.kist.re.kr/handle/201004/118763 A new device concept and implementation procedure of a monolithic two-color IR detector using MOVPE, grown p-HgCdTe/N-HgCdTe/CdTe/GaAs is discussed. Newly introduced two-color IR detector consists of simple n-p-N structure, which can be realized using simple p-N double layer HgCdTe material. Formation of potential barrier in the conduction band of p-N heterojuntion is a key to the successful operation of monolithic two-color IR detector. It prevents photogenerated minority carriers in small band gap region (p-HgCdTe) from diffusing to N-HgCdTe. The monolithic two-color IR detector was firstly fabricated using MOVPE grown p-Hg0.69Cd0.31Te/N-Hg0.64Cd0.36Te/CdTe/GaAs for SW/MWIR. SWIR diode shows R(0)A value of 752 Omega cm(2), while MWIR diode shows R(0)A value of 140 Omega cm(2). English SPIE-INT SOC OPTICAL ENGINEERING Monolithic two-color detector for short and middle wavelength IR using p-HgCdTe/N-HgCdTe/CdTe/GaAs Conference 10.1117/12.327989 1 SPIE Conference on Infrared Technology and Applications XXIV, v.3436, pp.72 - 76 SPIE Conference on Infrared Technology and Applications XXIV 3436 72 76 US SAN DIEGO, CA 1998-07 INFRARED TECHNOLOGY AND APPLICATIONS XXIV, PTS 1-2 000077548500010 Proceedings Paper