Kim, Seong Kwang Geum, Dae-Myeong Lim, Hyeong-Rak Han, JaeHoon Kim, Hyungjun Jeong, YeonJoo Kim, Sang-Hyeon 2024-01-19T18:01:07Z 2024-01-19T18:01:07Z 2021-09-04 2020-04 0741-3106 https://pubs.kist.re.kr/handle/201004/118822 In this letter, we propose the photo-responsible synaptic devices by using stackable GaAs photodetectors (PDs) and Ge-on-insulator (Ge-OI) synaptic transistors for the future three-dimensional (3D) artificial vision sensors. The photo-responsible synapse showed good photo-responding synaptic behaviors depending on the incident light to GaAs PD, which changes the hole injection into the Ge-OI transistors, resulting in the change in potentiation/depression characteristics. The training simulation highlighted the fabricated photo-responsible synapse can provide high colored pattern recognition tasks for semiconductor-based hardware systems. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors Article 10.1109/LED.2020.2971321 1 IEEE ELECTRON DEVICE LETTERS, v.41, no.4, pp.605 - 608 IEEE ELECTRON DEVICE LETTERS 41 4 605 608 scie scopus 000522206300020 2-s2.0-85082702164 Engineering, Electrical & Electronic Engineering Article Ge-OI wafer bonding synapse GaAs photodetector