Lee, Dongyun Chun, Min Chul Ko, Hyungduk Kang, Bo Soo Kim, Jaekyun 2024-01-19T18:01:20Z 2024-01-19T18:01:20Z 2021-09-04 2020-03-27 0957-4484 https://pubs.kist.re.kr/handle/201004/118835 Optimization and performance enhancement of a low-cost, solution-processed InGaZnO (IGZO) resistance random access memory (ReRAM) device using the manipulation of global and local oxygen vacancy (V-o) stoichiometry in metal oxide thin films was demonstrated. Control of the overall Ga composition within the IGZO thin film reduced the excessive formation of oxygen vacancies allowing for a reproducible resistance switching mechanism. Furthermore, sophisticated local control of stoichiometric V-o is achieved using a 5 nm Ni layer at the IGZO interface to serve as an oxygen capturing layer through the formation of NiOx, consequently facilitating the formation of conductive filaments (CFs) and preventing abrupt degradation of device performance. Additionally, reducing the cell dimension of the IGZO-based ReRAMs using a cross-bar electrode structure appeared to drastically improve their performances parameters, including operating voltage and resistance distribution due to the suppression of excessive CFs formation. The optimized ReRAM devices exhibited stable unipolar resistive switching behavior with an endurance of >200 cycles, a retention time of 10(4) s at 85 degrees C and an on/off ratio greater than about 10(2). Therefore, our findings address the demand for low-cost memory devices with high stability and endurance for next-generation data storage technology. English IOP PUBLISHING LTD TRANSISTORS PEROVSKITE BEHAVIOR Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy Article 10.1088/1361-6528/ab7e71 1 NANOTECHNOLOGY, v.31, no.24 NANOTECHNOLOGY 31 24 scie scopus 000525126900001 2-s2.0-85084474863 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Science & Technology - Other Topics Materials Science Physics Article TRANSISTORS PEROVSKITE BEHAVIOR solution-based IGZO oxygen vacancy oxygen control resistive switching