Ahn, D. Song, J. D. Kang, S. S. Lim, J. Y. Yang, S. H. Ko, S. Park, S. H. Park, S. J. Kim, D. S. Chang, H. J. Chang, Joonyeon 2024-01-19T18:01:50Z 2024-01-19T18:01:50Z 2021-09-05 2020-03-04 2045-2322 https://pubs.kist.re.kr/handle/201004/118863 Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an intrinsic p-type I-VII compound semiconductor. It shows remarkable optoelectronic properties, including a large exciton binding energy at room temperature and a very small piezoelectric coefficient. The major obstacle to its application is the difficulty in growing a single-crystal epitaxial film of cuprous halides. We first demonstrate the single crystal epitaxy of high quality cuprous iodide (CuI) film grown on Si and sapphire substrates by molecular beam epitaxy. Enhanced photoluminescence on the order of magnitude larger than that of GaN and continuous-wave optically pumped lasing were found in MBE grown CuI film. The intrinsic p-type characteristics of CuI were confirmed using an n-AlGaN/p-CuI junction that emits blue light. The discovery will provide an alternative way towards highly efficient optoelectronic devices compatible with both Si and III-nitride technologies. English NATURE PUBLISHING GROUP QUANTUM-CONFINED STARK PIEZOELECTRIC CONSTANTS ELECTRONIC-STRUCTURE OPTICAL GAIN N-TYPE CUCL CUBR PHOTOLUMINESCENCE LUMINESCENCE BAND Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes Article 10.1038/s41598-020-61021-2 1 SCIENTIFIC REPORTS, v.10, no.1 SCIENTIFIC REPORTS 10 1 scie scopus 000563272400002 2-s2.0-85081042247 Multidisciplinary Sciences Science & Technology - Other Topics Article QUANTUM-CONFINED STARK PIEZOELECTRIC CONSTANTS ELECTRONIC-STRUCTURE OPTICAL GAIN N-TYPE CUCL CUBR PHOTOLUMINESCENCE LUMINESCENCE BAND Cuprous Iodide p-type semiconductor light emitting diode blue light ultra-violet