Ahn, Jongtae Kang, Ji-Hoon Kyhm, Jihoon Choi, Hyun Tae Kim, Minju Ahn, Dae-Hwan Kim, Dae-Yeon Ahn, Il-Ho Park, Jong Bae Park, Soohyung Yi, Yeonjin Song, Jin Dong Park, Min-Chul Im, Seongil Hwang, Do Kyung 2024-01-19T18:01:51Z 2024-01-19T18:01:51Z 2021-09-05 2020-03 1944-8244 https://pubs.kist.re.kr/handle/201004/118864 Two-dimensional (2D) van der Waals (vdW) heterostructures herald new opportunities for conducting fundamental studies of new physical/chemical phenomena and developing diverse nanodevice applications. In particular, vdW heterojunction p–n diodes exhibit great potential as high-performance photodetectors, which play a key role in many optoelectronic applications. Here, we report on 2D MoTe2/MoS2 multilayer semivertical vdW heterojunction p–n diodes and their optoelectronic application in self-powered visible–invisible multiband detection and imaging. Our MoTe2/MoS2 p–n diode exhibits an excellent electrical performance with an ideality factor of less than 1.5 and a high rectification (ON/OFF) ratio of more than 104. In addition, the photodiode exhibits broad spectral photodetection capability over the range from violet (405 nm) to near-infrared (1310 nm) wavelengths and a remarkable linear dynamic range of 130 dB within an optical power density range of 10–5 to 1 W/cm2 in the photovoltaic mode. Together with these favorable static photoresponses and electrical behaviors, very fast photo- and electrical switching behaviors are clearly observed with negligible changes at modulation frequencies greater than 100 kHz. In particular, inspired by the photoswitching results for periodic red (638 nm) and near-infrared (1310 nm) illumination at 100 kHz, we successfully demonstrate a prototype self-powered visible–invisible multiband image sensor based on the MoTe2/MoS2 p–n photodiode as a pixel. Our findings can pave the way for more advanced developments in optoelectronic systems based on 2D vdW heterostructures. English American Chemical Society Self-Powered Visible-Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes Article 10.1021/acsami.9b22288 1 ACS Applied Materials & Interfaces, v.12, no.9, pp.10858 - 10866 ACS Applied Materials & Interfaces 12 9 10858 10866 N scie scopus 000518702300082 2-s2.0-85080046040 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article WAALS TRANSITION OPTOELECTRONICS 2D MoTe2 2D MoS2 semivertical geometry heterojunction photodiode visible-invisible multiband detection and imaging