Buffolo, Matteo Samparisi, Fabio Rovere, Lorenzo De Santi, Carlo Jung, Daehwan Norman, Justin Bowers, John E. Herrick, Robert W. Meneghesso, Gaudenzio Zanoni, Enrico Meneghini, Matteo 2024-01-19T18:02:30Z 2024-01-19T18:02:30Z 2021-09-05 2020-03 1077-260X https://pubs.kist.re.kr/handle/201004/118901 This work investigates the degradation processes affecting the long-term reliability of 13 mu m InAs quantum-dot lasers epitaxially grown on silicon. By submitting laser samples to constant-current stress, we were able to identify the physical mechanisms responsible for the optical degradation. More specifically, the samples (i) exhibited a gradual increase in threshold current, well correlated with (ii) a decrease in sub-threshold emission, and (iii) a decrease in slope efficiency. These variations were found to be compatible with a diffusion process involving the propagation of defects toward the active region of the device and the subsequent decrease in injection efficiency. This hypothesis was also supported by the increase in the defect-related current conduction components exhibited by the electrical characteristics, and highlights the role of defects in the gradual degradation of InAs quantum dot laser diodes. Electroluminescence measurements were used to provide further insight in the degradation process. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC EMISSION Investigation of Current-Driven Degradation of 1.3 mu m Quantum-Dot Lasers Epitaxially Grown on Silicon Article 10.1109/JSTQE.2019.2939519 1 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.26, no.2 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 26 2 scie scopus 000487051600001 2-s2.0-85072530368 Engineering, Electrical & Electronic Quantum Science & Technology Optics Physics, Applied Engineering Physics Optics Article EMISSION Quantum dots laser diodes degradation reliability silicon photonics semiconductor defects