Youm, Mi Rae Yun, Sung-Il Choi, Sung Churl Park, Sang Whan 2024-01-19T18:02:37Z 2024-01-19T18:02:37Z 2021-09-05 2020-03 0272-8842 https://pubs.kist.re.kr/handle/201004/118908 SiO2-C precursors with various surface areas were derived from tetraethyl orthosilicate and phenolic resin as Si and C sources, respectively, by a modified sol-gel process using the in situ precipitation of phenol resin in a prepared wet gel. The surface area of the SiO2-C precursors was varied from 20 to 175 m(2)/g by changing the C/Si molar ratio in the preform. beta-SiC powders were synthesized using carbothermal reduction in vacuum at the temperature range of 1200-1600 degrees C. The effects of the temperature and heat treatment time as well as that of the stifface area of the preform on the formation of beta-SiC powders were studied. It was determined that the formation of beta-SiC started at 1200 degrees C and was considerably promoted as the heat treatment temperature and time further increased during the carbothermal reduction of SiO2-C preforms with high surface area. When high surface area SiO2-C preforms were used, highly crystalline SiC powders were synthesized at 1600 degrees C in vacuum with a high yield of 85%. English ELSEVIER SCI LTD SILICON-CARBIDE POWDERS SOL-GEL CARBON NANOWIRES Synthesis of beta-SiC powders by the carbothermal reduction of porous SiO2-C hybrid precursors with controlled surface area Article 10.1016/j.ceramint.2019.10.223 1 CERAMICS INTERNATIONAL, v.46, no.4, pp.4870 - 4877 CERAMICS INTERNATIONAL 46 4 4870 4877 scie scopus 000512219600100 2-s2.0-85075450826 Materials Science, Ceramics Materials Science Article SILICON-CARBIDE POWDERS SOL-GEL CARBON NANOWIRES SiC Sol-gel method Meso-macro porous Carbotermal reduction Synthesis