Geum, Dae-Myeong Kim, Seong Kwang Lee, Subin Lim, Donghwan Kim, Hyung-Jun Choi, Chang Hwan Kim, Sang-Hyeon 2024-01-19T18:02:44Z 2024-01-19T18:02:44Z 2021-09-05 2020-03 0741-3106 https://pubs.kist.re.kr/handle/201004/118915 We demonstrated the monolithic 3D (M3D) integration of InGaAs photodetectors (PDs) on silicon-on-insulator metal-oxide-semiconductor field-effect transistors (SOI-MOSFETs) by the sequential process of InGaAs PDs on pre-fabricated SOI-MOSFETs. InGaAs PDs and SOI MOSFETs showed their original performances after integration and sequential process thanks to the low-temperature process. In addition, the integrated devices successfully performed the fundamental readout circuit operation such as direct injection and source follower per detector (SFD) by connecting transistors (Trs) and PDs. By illuminating 1550 nm laser on InGaAs PDs, the different behaviors of output voltages were clearly obtained according to the Tr's on/off state. From these results, we believe that this monolithic 3D integration method could be a feasible approach toward high-resolution multicolor imaging systems. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process Article 10.1109/LED.2020.2966986 1 IEEE ELECTRON DEVICE LETTERS, v.41, no.3, pp.433 - 436 IEEE ELECTRON DEVICE LETTERS 41 3 433 436 scie scopus 000519704300031 2-s2.0-85080878696 Engineering, Electrical & Electronic Engineering Article Monolithic integration InGaAs imager high-resolution imaging