Chee, Sang-Soo Lee, Won-June Jo, Yong-Ryun Cho, Min Kyung Chun, DongWon Baik, Hionsuck Kim, Bong-Joong Yoon, Myung-Han Lee, Kayoung Ham, Moon-Ho 2024-01-19T18:02:54Z 2024-01-19T18:02:54Z 2021-09-04 2020-03 1616-301X https://pubs.kist.re.kr/handle/201004/118924 Defect engineering of 2D transition metal dichalcogenides (TMDCs) is essential to modulate their optoelectrical functionalities, but there are only a few reports on defect-engineered TMDC device arrays. Herein, the atomic vacancy control and elemental substitution in a chemical vapor deposition (CVD)-grown molybdenum disulfide (MoS2) monolayer via mild photon irradiation under controlled atmospheres are reported. Raman spectroscopy, photoluminescence, X-ray, and ultraviolet photoelectron spectroscopy comprehensively demonstrate that the well-controlled photoactivation delicately modulates the sulfur-to-molybdenum ratio as well as the work function of a MoS2 monolayer. Furthermore, the atomic-resolution scanning transmission electron microscopy directly confirms that small portions (2-4 at% corresponding to the defect density of 4.6 x 10(12) to 9.2 x 10(13) cm(-2)) of sulfur vacancies and oxygen substituents are generated in the MoS2 while the overall atomic-scale structural integrity is well preserved. Electronic and optoelectronic device arrays are also realized using the defect-engineered CVD-grown MoS2, and it is further confirmed that the well-defined sulfur vacancies and oxygen substituents effectively give rise to the selective n- and p-doping in the MoS2, respectively, without the trade-off in device performance. In particular, low-percentage oxygen-doped MoS2 devices show outstanding optoelectrical performance, achieving a detectivity of approximate to 10(13) Jones and rise/decay times of 0.62 and 2.94 s, respectively. English WILEY-V C H VERLAG GMBH CHEMICAL-VAPOR-DEPOSITION FEW-LAYER MOS2 PLASMA PHOTODETECTOR ENHANCEMENT GROWTH Atomic Vacancy Control and Elemental Substitution in a Monolayer Molybdenum Disulfide for High Performance Optoelectronic Device Arrays Article 10.1002/adfm.201908147 1 ADVANCED FUNCTIONAL MATERIALS, v.30, no.11 ADVANCED FUNCTIONAL MATERIALS 30 11 scie scopus 000510022100001 2-s2.0-85078838194 Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article CHEMICAL-VAPOR-DEPOSITION FEW-LAYER MOS2 PLASMA PHOTODETECTOR ENHANCEMENT GROWTH defect engineering elemental substitution molybdenum disulfides transition metal dichalcogenides vacancy control