Jeon, Dae-Young 2024-01-19T18:04:29Z 2024-01-19T18:04:29Z 2021-09-05 2020-02 0268-1242 https://pubs.kist.re.kr/handle/201004/119014 The simple device structure of junctionless transistors (JLTs), which lack PN junctions and involve bulk-conduction-based operation, is an attractive component for the future fulfilment of Moore's law. However, the unique bulk conduction mechanism of JLTs introduces inaccuracies in low-field mobility (mu(0)) extracted from conventional Y-function method. The top channel width-dependent mu(0) error of tri-gate JLTs was investigated using numerical simulation and analytical modeling. This work provides important information for an accurate determination of mu(0) in tri-gate JLTs. English IOP PUBLISHING LTD NANOWIRE TRANSISTORS EXTRACTION VOLTAGE Accurate determination of low-field mobility in tri-gate junctionless transistors Article 10.1088/1361-6641/ab607d 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.35, no.2 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 35 2 scie scopus 000520424800001 2-s2.0-85082242109 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Article NANOWIRE TRANSISTORS EXTRACTION VOLTAGE junctionless transistors (JLTs) low-field mobility (mu(0)) Y-function method bulk conduction numerical simulations analytical modeling