Kim, Seong Kwang Jeong, YeonJoo Bidenko, Pavlo Lim, Hyeong-Rak Jeon, Yu -Rim Kim, Hansung Lee, Yun Jung Geum, Dae-Myeong Han, JaeHoon Choi, Changhwan Kim, Hyung-jun Kim, SangHyeon 2024-01-19T18:04:35Z 2024-01-19T18:04:35Z 2021-09-05 2020-02 1944-8244 https://pubs.kist.re.kr/handle/201004/119021 Although they have attracted enormous attention in recent years, software-based and two-dimensional hardware-based artificial neural networks (ANNs) may consume a great deal of power. Because there will be numerous data transmissions through a long interconnection for learning, power consumption in the interconnect will be an inevitable problem for low-power computing. Therefore, we suggest and report 3D stackable synaptic transistors for 3D ANNs, which would be the strongest candidate in future computing systems by minimizing power consumption in the interconnection. To overcome the problems of enormous power consumption, it might be necessary to introduce a 3D stackable ANN platform. With this structure, short vertical interconnection can be realized between the top and bottom devices, and the integration density can be significantly increased for integrating numerous neuromorphic devices. In this paper, we suggest and show the feasibility of monolithic 3D integration of synaptic devices using the channel layer transfer method through a wafer bonding technique. Using a low-temperature processible III-V and composite oxide (Al2O3/HfO2/Al2O3)-based weight storage layer, we successfully demonstrated synaptic transistors showing good linearity (alpha(p)/alpha(d) = 1.8/0.5), a high transconductance ratio (6300), and very good stability. High learning accuracy of 97% was obtained in the training of 1 million MNIST images based on the device characteristics. English American Chemical Society 3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks Article 10.1021/acsami.9b22008 1 ACS Applied Materials & Interfaces, v.12, no.6, pp.7372 - 7380 ACS Applied Materials & Interfaces 12 6 7372 7380 N scie scopus 000514256400059 2-s2.0-85079350651 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article DETECTORS DEVICE neuromorphic monolithic 3D integration artificial neural network III-V synapse