Lee, Woo Chul Kim, Sangtae Larsen, Eric S. Choi, Jung-Hae Baek, Seung-Hyub Lee, Minji Cho, Deok-Yong Lee, Han-Koo Hwang, Cheol Seong Bielawski, Christopher W. Kim, Seong Keun 2024-01-19T18:05:01Z 2024-01-19T18:05:01Z 2021-09-04 2020-01-31 0169-4332 https://pubs.kist.re.kr/handle/201004/119045 An atomic structure is widely recognized as the key that determines the physical properties of a material. A critical challenge to engineer the atomic structure is that many useful crystals are metastable under ambient conditions and difficult to realize. Here, it is demonstrated that highly metastable atomic arrangements can be synthesized in the isostructural matrix via atomic layer deposition. Studying highly metastable BeO6 octahedra in rocksalt MgO as a model system, it is experimentally and theoretically shown that the single-phase BexMg1-xO thin films adopt rocksalt structure over wurtzite for the composition range x < 0.21. The single-phase rocksalt films exhibit almost doubled dielectric constants with the presence of BeO6 octahedra. Such atomic environment engineering may create intriguing properties that have not been realized in the constituent materials. This work provides excellent opportunities to explore unprecedented materials properties via engineering metastable atomic arrangements using the isostructural matrix approach. English ELSEVIER HIGH DIELECTRIC-CONSTANT LAYER DEPOSITION THIN-FILMS DIOXIDE MEMORY MGO Atomic engineering of metastable BeO6 octahedra in a rocksalt framework Article 10.1016/j.apsusc.2019.144280 1 APPLIED SURFACE SCIENCE, v.501 APPLIED SURFACE SCIENCE 501 scie scopus 000504658100007 2-s2.0-85073189396 Chemistry, Physical Materials Science, Coatings & Films Physics, Applied Physics, Condensed Matter Chemistry Materials Science Physics Article HIGH DIELECTRIC-CONSTANT LAYER DEPOSITION THIN-FILMS DIOXIDE MEMORY MGO Metastable phase stabilization Octahedral BeO6 Rocksalt High-k dielectric Atomic layer deposition