Ju, BK Park, HW Lee, YH Chung, IJ Haskard, MR Park, JH Oh, MH 2024-01-19T18:08:02Z 2024-01-19T18:08:02Z 2022-03-07 1996 https://pubs.kist.re.kr/handle/201004/119048 Uniform and reproducible silicon tip arrays were fabricated using the reactive ion etching followed by the re-oxidation sharpening. Molybdenum was coated on the some of the silicon tip array. Current-voltage characteristics and current fluctuations were tested in the high vacuum level. Turn-on voltage of the uncoated tip was 35V and maximum current was 1mA, while turn-on voltage of the coated tip was 15V and maximum current was 6mA. While uncoated silicon tip was destroyed after 13 minutes after operation and characteristics. Obtained currents were proved to be field emission currents using the Fowler-Nordheim plot studies. English I E E E Field emission properties of Mo-coated Si field emitter arrays and formation of molybdenum silicide Conference 1 9th International Vacuum Microelectronics Conference(IVMC'96), pp.221 - 225 9th International Vacuum Microelectronics Conference(IVMC'96) 221 225 US ST PETERSBURG, RUSSIA 1996-07-07 IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST A1996BJ05U00052 2-s2.0-0030349544 Proceedings Paper