Pyeon, Jung Joon Baek, In-Hwan Lee, Woo Chul Lee, Hansol Won, Sung Ok Lee, Ga-Yeon Chung, Taek-Mo Han, Jeong Hwan Baek, Seung-Hyub Kim, Jin-Sang Choi, Ji-Won Kang, Chong-Yun Kim, Seong Keun 2024-01-19T18:30:31Z 2024-01-19T18:30:31Z 2021-09-05 2020-01-15 1944-8244 https://pubs.kist.re.kr/handle/201004/119083 Two-dimensional (2D) metal dichalcogenides have drawn considerable interest because they offer possibilities for the implementation of emerging electronics. The emerging electronics are moving toward two major directions: vertical expansion of device space and flexibility. However, the development of a synthesis method for 2D metal dichalcogenides that meets all the requirements remains a significant challenge. Here, we propose a promising method for wafer-scale, conformal, and low-temperature (<240 degrees C) synthesis of single-phase SnS2 via the atomic layer deposition technique. There is a trade-off relationship between the crystallinity and orientation preference of SnS2, which is efficiently eliminated by the two-step growth occurring at different temperatures. Consequently, the van der Waals layers of the highly crystalline SnS2 are parallel to the substrate. Thin-film transistors (TFTs) comprising the SnS2 layer show reasonable electrical performances (field-effect mobility: similar to 0.8 cm(2) V-1 s(-1) and on/off ratio:, similar to 10(6)), which are comparable to that of a single-crystal SnS2 flake. Moreover, we demonstrate nonplanar and flexible TFTs to identify the feasibility of the implementation of future electronics. Both the diagonal-structured TFT and flexible TFT fabricated without a transfer process show electrical performances comparable to those of rigid and planar TFTs. Particularly, the flexible TFT does not exhibit substantial degradation even after 2000 bending cycles. Our work would provide decisive opportunities for the implementation of future electronic devices utilizing 2D metal chalcogenides. English American Chemical Society TRANSITION-METAL DICHALCOGENIDES MOS2 TRANSISTORS GRAPHENE GROWTH Wafer-Scale, Conformal, and Low-Temperature Synthesis of Layered Tin Disulfides for Emerging Nonplanar and Flexible Electronics Article 10.1021/acsami.9b19471 1 ACS Applied Materials & Interfaces, v.12, no.2, pp.2679 - 2686 ACS Applied Materials & Interfaces 12 2 2679 2686 scie scopus 000508464500078 2-s2.0-85077952549 Nanoscience & Nanotechnology Materials Science, Multidisciplinary Science & Technology - Other Topics Materials Science Article TRANSITION-METAL DICHALCOGENIDES MOS2 TRANSISTORS GRAPHENE GROWTH SnS2 atomic layer deposition low temperatures thin film transistors non-planar devices flexible devices