Huang, H. Duan, J. Dong, B. Norman, J. Jung, D. Bowers, J. E. Grillot, F. 2024-01-19T18:30:55Z 2024-01-19T18:30:55Z 2021-09-05 2020-01-01 2378-0967 https://pubs.kist.re.kr/handle/201004/119107 This work investigates the performance of 1.3-mu m quantum dot lasers epitaxially grown on silicon under optical feedback sensitivity with different temperature and doping profiles. Experiments show that these quantum dot lasers exhibit a very high degree of resistance to both incoherent and coherent optical feedbacks. 10 Gbps penalty-free transmissions are also unveiled under external modulation and at different temperatures. The paper draws attention on quantum dot lasers with p-doping that exhibit a better thermal resistance, a lower linewidth enhancement factor, a higher critical feedback level, and a better spectral stability with less intensity noise. Together, these properties make epitaxial quantum dot lasers with p-doping more promising for isolator-free and Peltier-free applications, which are meaningful for future high-speed photonic integrated circuits. English AMER INST PHYSICS COHERENCE-COLLAPSE THRESHOLD LINEWIDTH ENHANCEMENT FACTOR SEMICONDUCTOR-LASERS SENSITIVITY INTEGRATION PHOTONICS ISOLATORS DYNAMICS DIODE NOISE Epitaxial quantum dot lasers on silicon with high thermal stability and strong resistance to optical feedback Article 10.1063/1.5120029 1 APL PHOTONICS, v.5, no.1 APL PHOTONICS 5 1 scie scopus 000515503400001 2-s2.0-85079011007 Optics Physics, Applied Optics Physics Article COHERENCE-COLLAPSE THRESHOLD LINEWIDTH ENHANCEMENT FACTOR SEMICONDUCTOR-LASERS SENSITIVITY INTEGRATION PHOTONICS ISOLATORS DYNAMICS DIODE NOISE