Sohn, Byungmin Kim, Bongju Choi, Jun Woo Chang, Seo Hyoung Han, Jung Hoon Kim, Changyoung 2024-01-19T18:31:23Z 2024-01-19T18:31:23Z 2021-09-05 2020-01 1567-1739 https://pubs.kist.re.kr/handle/201004/119130 A controversy arose over the interpretation of the recently observed hump features in Hall resistivity rho(xy) from ultra-thin SrRuO3 (SRO) film; it was initially interpreted to be due to topological Hall effect but was later proposed to be from existence of regions with different anomalous Hall effect (AHE). In order to settle down the issue, we performed Hall effect as well as magneto-optic Kerr-effect measurements on 4 unit cell SRO films. Clear hump features are observed in rho(xy),whereas neither hump feature nor double hysteresis loop is seen in the Kerr rotation which should be proportional to the magnetization. In addition, magnetization measurement by superconducting quantum interference device shows no sign of multiple coercive fields. These results show that inhomogeneous AHE alone cannot explain the observed hump behavior in rho(xy )data. We suggest that emergence of the hump structure in rho(xy) is closely related to the growth condition. English ELSEVIER Hump-like structure in Hall signal from ultra-thin SrRuO3 films without inhomogeneous anomalous Hall effect Article 10.1016/j.cap.2019.10.021 1 CURRENT APPLIED PHYSICS, v.20, no.1, pp.186 - 190 CURRENT APPLIED PHYSICS 20 1 186 190 scie scopus kci ART002553607 000496996300030 2-s2.0-85074404487 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article Topological Hall effect Anomalous Hall effect Oxide thin films Magneto-optic kerr effect Pulsed laser deposition Ultra-thin film