Moon, Hongjae Kim, Jeongmin Chun, Dong Won Hong, Seokkyoon Yoon, Young Soo Lee, Wooyoung 2024-01-19T18:31:31Z 2024-01-19T18:31:31Z 2021-09-05 2020-01 1567-1739 https://pubs.kist.re.kr/handle/201004/119139 The thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell (C/S) nanowires grown by the method of on-film formation of nanowires were systematically investigated. The electrical conductivity and Seebeck coefficient of nanowires with different diameters were measured as a function of the temperature. The contribution of Sn and Sb shells to the total transport in the C/S nanowires was determined using analytical fitting based on the parallel combination of the conducive system model. The carrier-interface boundary scattering at the C/S interface was quantitatively evaluated as the sheet resistance. In addition, the effect of hole doping on the transport properties was also observed in the Bi/Sn C/S nanowires. English ELSEVIER FIGURE-OF-MERITS THERMAL-CONDUCTIVITY ELECTRICAL-RESISTIVITY POWER FACTOR SILICON BISMUTH REDUCTION STRAIN Radial heterostructure and interface effects on thermoelectric transport properties of Bi/Sn and Bi/Sb core/shell nanowires Article 10.1016/j.cap.2019.10.007 1 CURRENT APPLIED PHYSICS, v.20, no.1, pp.43 - 48 CURRENT APPLIED PHYSICS 20 1 43 48 scie scopus kci ART002553353 000496996300008 2-s2.0-85073026172 Materials Science, Multidisciplinary Physics, Applied Materials Science Physics Article FIGURE-OF-MERITS THERMAL-CONDUCTIVITY ELECTRICAL-RESISTIVITY POWER FACTOR SILICON BISMUTH REDUCTION STRAIN Core/shell nanowires On-film formation of nanowires Heterostructure Interface Thermoelectric Seebeck coefficient