Shin, Hyeonwoo Oh, Jinwoo Kim, Youngjin Son, Jeong Gon Lee, Changhee Shin, Keun-Young 2024-01-19T18:31:35Z 2024-01-19T18:31:35Z 2021-09-05 2020-01 1226-086X https://pubs.kist.re.kr/handle/201004/119142 A highly transparent and high-performance random-network single-walled carbon nanotubes (r-SWCNTs) transistor was successfully fabricated by using chemical vapor deposition-grown graphene source/drain (S/D) electrodes. The bottom-gate, bottom-contact geometry was selected for the graphene S/D contact r-SWCNT (Gr-SWCNT) transistor because of its enhanced gate modulation and good sustainability. A palladium S/D contact r-SWCNT (Pd-SWCNT) transistor with the same device geometry was also fabricated for a comparative study. The transmission line method demonstrated that the resistivity of graphene was small enough (similar to 0.95 Omega mu m) to be used as S/D electrodes in a single transistor device, and the contact resistance of Gr-SWCNTs was much lower than that of Pd-SWCNTs. Particularly, the correlation between the applied gate voltage and the sheet resistance is strongly dependent on the r-SWCNT film density. The resulting Gr-SWCNT transistor exhibits high mobility and good on/off current ratio compared to the Pd-SWCNT transistor. The high charge injection originated from the ohmic contact behavior and dense r-SWCNT channel formation by the enhancement of selective wetting due to the surface energy matching between the r-SWCNT semiconductor and graphene S/D electrodes. Thus, this approach can encourage creating highly transparent and high-performance carbon-based field effect transistor. (C) 2019 The Korean Society of Industrial and Engineering Chemistry. Published by Elsevier B.V. All rights reserved. English 한국공업화학회 Improved electrical performance and transparency of bottom-gate, bottom-contact single-walled carbon nanotube transistors using graphene source/drain electrodes Article 10.1016/j.jiec.2019.09.038 1 Journal of Industrial and Engineering Chemistry, v.81, pp.488 - 495 Journal of Industrial and Engineering Chemistry 81 488 495 N scie scopus kci ART002553257 000501660000050 2-s2.0-85073020434 Chemistry, Multidisciplinary Engineering, Chemical Chemistry Engineering Article DEPOSITION RESISTANCE FILMS Random-network carbon nanotube Graphene Bottom-gate bottom-contact Transmission line method Transparent transistor