Chung, Hong Keun Pyeon, Jung Joon Baek, In-Hwan Lee, Ga-Yeon Lee, Hansol Won, Sung Ok Han, Jeong Hwan Chung, Taek-Mo Park, Tae Joo Kim, Seong Keun 2024-01-19T18:31:58Z 2024-01-19T18:31:58Z 2021-09-04 2020-01 0734-2101 https://pubs.kist.re.kr/handle/201004/119164 Although perovskite tin titanate (SnTiO3, STO) has been predicted to have ferroelectricity with a large spontaneous polarization, the implementation of metastable perovskite STO remains a great challenge. In this study, the atomic layer deposition of STO films was attempted using bis(1-dimethylamino-2-methyl-2-propoxy)tin(II) as the Sn source, titanium-tetrakis-isopropoxide as the Ti source, and water as the oxygen source. It was found that during the process, adsorption of both the precursors was enhanced on the heterogeneous reaction surface because of the correlation growth behavior. STO films remained amorphous below 250 degrees C. Furthermore, although the film was crystallized at 270 degrees C, the perovskite phase was not identified. Despite the use of the Sn precursor with Sn2+, Sn ions in all the films transformed into Sn4+. Although the postdeposition annealing process in a forming gas atmosphere was conducted for the perovskite conversion, the STO film transformed into Ti5Sn3, an intermetallic compound, at 500 degrees C. English A V S AMER INST PHYSICS TIO2 THIN-FILMS Investigation of phases and chemical states of tin titanate films grown by atomic layer deposition Article 10.1116/1.5134136 1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.38, no.1 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 38 1 scie scopus 000537525500001 2-s2.0-85077234877 Materials Science, Coatings & Films Physics, Applied Materials Science Physics Article TIO2 THIN-FILMS atomic layer deposition tin titanate ferroelectric