Lee, Hyebin Lee, Kookjin Kim, Yanghee Ji, Hyunjin Choi, Junhee Kim, Minsik Ahn, Jae-Pyoung Kim, Gyu-Tae 2024-01-19T18:32:38Z 2024-01-19T18:32:38Z 2021-09-05 2019-12-07 2040-3364 https://pubs.kist.re.kr/handle/201004/119204 Transition-metal dichalcogenide (TMD) materials with two-dimensional layered structures and stable surfaces are well suited for transparent and flexible device applications. In order to completely utilize the advantages of thickness control and fabrication of various heterostructure stacks, we proposed a transfer method of TMD field-effect transistors (FETs) and TMD complementary metal-oxide-semiconductor (CMOS) circuits from a Si/SiO2 substrate to a flexible substrate. We compared the characteristics of transferred MoS2 and WSe2 FETs with those of the corresponding devices transferred after channel passivation with an Al2O3 layer on a flexible substrate. Al2O3 passivation further stabilized the transfer of the entire device with electrodes. A CMOS circuit with MoS2 and WSe2 materials could be successfully transferred to a polyethylene terephthalate substrate after the channel passivation. This implies that TMD circuits can be easily fabricated on polymer substrates, which makes them suitable for use in semiconductor processes, for various applications. English ROYAL SOC CHEMISTRY HIGH-PERFORMANCE ROOM-TEMPERATURE MOS2 TRANSISTORS EXFOLIATION FILMS Transfer of transition-metal dichalcogenide circuits onto arbitrary substrates for flexible device applications Article 10.1039/c9nr05065e 1 NANOSCALE, v.11, no.45, pp.22118 - 22124 NANOSCALE 11 45 22118 22124 scie scopus 000500778500044 2-s2.0-85075632717 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Chemistry Science & Technology - Other Topics Materials Science Physics Article HIGH-PERFORMANCE ROOM-TEMPERATURE MOS2 TRANSISTORS EXFOLIATION FILMS