Yeo, Inah Kim, Doukyun Han, Il Ki Song, Jin Dong 2024-01-19T18:32:42Z 2024-01-19T18:32:42Z 2021-09-05 2019-12-06 2045-2322 https://pubs.kist.re.kr/handle/201004/119208 Herein, we present the calculated strain-induced control of single GaAs/AlGaAs quantum dots (QDs) integrated into semiconductor micropillar cavities. We show precise energy control of individual single GaAs QD excitons under multi-modal stress fields of tailored micropillar optomechanical resonators. Further, using a three-dimensional envelope-function model, we evaluated the quantum mechanical correction in the QD band structures depending on their geometrical shape asymmetries and, more interestingly, on the practical degree of Al interdiffusion. Our theoretical calculations provide the practical quantum error margins, obtained by evaluating Al-interdiffused QDs that were engineered through a front-edge droplet epitaxy technique, for tuning engineered QD single-photon sources, facilitating a scalable on-chip integration of QD entangled photons. English NATURE PUBLISHING GROUP ENTANGLED PHOTONS HIGH-YIELD DROPLET PARAMETERS DYNAMICS Strain-induced control of a pillar cavity-GaAs single quantum dot photon source Article 10.1038/s41598-019-55010-3 1 SCIENTIFIC REPORTS, v.9 SCIENTIFIC REPORTS 9 scie scopus 000501738000001 2-s2.0-85076306364 Multidisciplinary Sciences Science & Technology - Other Topics Article ENTANGLED PHOTONS HIGH-YIELD DROPLET PARAMETERS DYNAMICS quantum dots single photon sources micropillar cavity strain-induced control QD entangled photons