Yu, Ilhwan Ye, Youngsin Moon, Sangji Lee, Seoung-Ki Joo, Yongho 2024-01-19T18:32:44Z 2024-01-19T18:32:44Z 2021-09-04 2019-12-06 2196-7350 https://pubs.kist.re.kr/handle/201004/119210 Controlling the packing density and degree of alignment of carbon nanotubes is essential for obtaining optimal charge transport properties in carbon nanotube transistors. Here, a method is introduced for evaporative self-assembly at the air-water interface to deposit continuous films of well-aligned, uniform semiconducting bundle nanotubes for stretchable and bendable transistor applications. Polymer-wrapped nanotubes in organic ink are dropped on the water surface and diffused at the air-water interface to deposit aligned semiconducting single-walled carbon nanotubes on a partially submersed substrate. The speed dependency of the substrate is also elucidated. The optimized conditions enable alignment within +/- 5 degrees at a packing density of approximate to 12.5 nanotubes mu m(-1) with continuously well-ordered layers. The semiconducting single-walled carbon nanotube films enabled a high degree of stretchability, with the flexible nature of the ion gel maintaining the charge properties of the device. The resulting ion-gel-based field effect transistor devices have a high mobility of 5.11 cm(2) V-1 s(-1) and an on/off ratio >10(4) under both bending and elongation and demonstrate a continuous performance over 1000 stretching cycles. English WILEY FINGERING INSTABILITY RAMAN-SPECTROSCOPY ELECTRONICS ARRAYS DISPERSION ALIGNMENT DENSITY DRIVEN A Bendable, Stretchable Transistor with Aligned Carbon Nanotube Films Article 10.1002/admi.201900945 1 ADVANCED MATERIALS INTERFACES, v.6, no.23 ADVANCED MATERIALS INTERFACES 6 23 scie scopus 000494084300001 2-s2.0-85076220757 Chemistry, Multidisciplinary Materials Science, Multidisciplinary Chemistry Materials Science Article FINGERING INSTABILITY RAMAN-SPECTROSCOPY ELECTRONICS ARRAYS DISPERSION ALIGNMENT DENSITY DRIVEN evaporative self-assembly ion gels semiconducting carbon nanotubes stretchable transistors