Rathod, Kunalsinh N. Gadani, Keval Boricha, Hetal Sagapariya, Khushal Vaisnani, Ajay Dhruv, Davit Joshi, Ashvini D. Singh, Jitendra P. Chae, Keun H. Asokan, Kandasami Solanki, Piyush S. Shah, Nikesh A. 2024-01-19T18:33:10Z 2024-01-19T18:33:10Z 2022-01-25 2019-12 1862-6300 https://pubs.kist.re.kr/handle/201004/119234 Herein, the bipolar resistive switching of Y0.95Sr0.05MnO3 (YSMO) film grown on a Si substrate by pulsed laser deposition is reported. The mixed valent state of Mn ions with the presence of oxygen vacancies is confirmed by near-edge X-ray absorption fine structure. The temperature-dependent mobility and other switching parameters are extracted using Murgatroyd expression and a space charge-limited mechanism in the high-resistance state. The YSMO thin film shows better resistive switching as the switching layer (a layer close to a positively biased electrode) thickness decreases. The bipolar resistive switching of the film suggests a strong dependence on localized switching thickness and temperature. English WILEY-V C H VERLAG GMBH Extraction of Switching Parameters for Sr-Doped YMnO3 Thin Film Article 10.1002/pssa.201900780 1 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.216, no.24 PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 216 24 N scie scopus 000496031000001 2-s2.0-85075017161 Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Materials Science Physics Article CHARGE-LIMITED CURRENT films near-edge X-ray absorption fine structure switching