Niethammer, Matthias Widmann, Matthias Rendler, Torsten Morioka, Naoya Chen, Yu-Chen Stoehr, Rainer Ul Hassan, Jawad Onoda, Shinobu Ohshima, Takeshi Lee, Sang-Yun Mukherjee, Amlan Isoya, Junichi Nguyen Tien Son Wrachtrup, Joerg 2024-01-19T18:33:31Z 2024-01-19T18:33:31Z 2021-09-05 2019-12 2041-1723 https://pubs.kist.re.kr/handle/201004/119255 Quantum technology relies on proper hardware, enabling coherent quantum state control as well as efficient quantum state readout. In this regard, wide-bandgap semiconductors are an emerging material platform with scalable wafer fabrication methods, hosting several promising spin-active point defects. Conventional readout protocols for defect spins rely on fluorescence detection and are limited by a low photon collection efficiency. Here, we demonstrate a photo-electrical detection technique for electron spins of silicon vacancy ensembles in the 4H polytype of silicon carbide (SiC). Further, we show coherent spin state control, proving that this electrical readout technique enables detection of coherent spin motion. Our readout works at ambient conditions, while other electrical readout approaches are often limited to low temperatures or high magnetic fields. Considering the excellent maturity of SiC electronics with the outstanding coherence properties of SiC defects, the approach presented here holds promises for scalability of future SiC quantum devices. English Nature Publishing Group Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions Article 10.1038/s41467-019-13545-z 1 Nature Communications, v.10 Nature Communications 10 Y scie scopus 000502061200001 2-s2.0-85076006146 Multidisciplinary Sciences Science & Technology - Other Topics Article NITROGEN-VACANCY CENTERS MAGNETIC-RESONANCE EDMR 4H MAGNETOMETER EPR