Norman, Justin C. Zhang, Zeyu Jung, Daehwan Shang, Chen Kennedy, M. J. Dumont, Mario Herrick, Robert W. Gossard, Arthur C. Bowers, John E. 2024-01-19T18:33:56Z 2024-01-19T18:33:56Z 2021-09-05 2019-12 0018-9197 https://pubs.kist.re.kr/handle/201004/119282 p-type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100 degrees C, nearly complete insensitivity to optical feedback, and orders of magnitude improvement in device reliability relative to unintentionally doped active regions. Also described is a spectrally resolved analysis of the effect of p-modulation doping on the optical gain revealing anomalous behavior that explains the high characteristic temperatures commonly observed in literature for similar devices on native substrate. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC AUGER RECOMBINATION TEMPERATURE SI The Importance of p-Doping for Quantum Dot Laser on Silicon Performance Article 10.1109/JQE.2019.2941579 1 IEEE JOURNAL OF QUANTUM ELECTRONICS, v.55, no.6 IEEE JOURNAL OF QUANTUM ELECTRONICS 55 6 scie scopus 000492892200001 2-s2.0-85077772886 Engineering, Electrical & Electronic Quantum Science & Technology Optics Physics, Applied Engineering Physics Optics Article AUGER RECOMBINATION TEMPERATURE SI Integrated optoelectronics photonics quantum dots semiconductor lasers