Kim, Taeyueb Joo, Sungjung Koo, Hyun Cheol Hong, Jinki 2024-01-19T18:34:17Z 2024-01-19T18:34:17Z 2021-09-04 2019-12 0374-4884 https://pubs.kist.re.kr/handle/201004/119303 We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios. English KOREAN PHYSICAL SOC CHARGE-LIMITED CURRENTS Large Magnetoconductance in GaAs Induced by Impact Ionization Article 10.3938/jkps.75.1017 1 JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.75, no.12, pp.1017 - 1020 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 75 12 1017 1020 scie scopus kci ART002539483 000508392300013 2-s2.0-85077065459 Physics, Multidisciplinary Physics Article CHARGE-LIMITED CURRENTS Magnetoresistance Impact ionization Avalanche effect Space-charge effect GaAs