Zhang, Zeyu Jung, Daehwan Norman, Justin C. Chow, Weng W. Bowers, John E. 2024-01-19T19:01:20Z 2024-01-19T19:01:20Z 2021-09-05 2019-11 1077-260X https://pubs.kist.re.kr/handle/201004/119396 The linewidth enhancement factor (alpha(H)) is an important parameter for semiconductor lasers. In this paper, we investigate, both theoretically and experimentally, the key parameters that affect alpha(H) of InAs/GaAs quantum dot lasers. Both dot uniformity and doping density are found to be critical in achieving small alpha(H) in quantum dot lasers. The prospects for quantum dot lasers in isolator-free and narrow linewidth applications are also discussed. English IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC SEMICONDUCTOR-LASERS OPTICAL FEEDBACK REFRACTIVE-INDEX WELL GAIN NOISE MODULATION REDUCTION DYNAMICS DIODES Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications Article 10.1109/JSTQE.2019.2916884 1 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, v.25, no.6 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 25 6 scie scopus 000473431600001 2-s2.0-85068240284 Engineering, Electrical & Electronic Quantum Science & Technology Optics Physics, Applied Engineering Physics Optics Article SEMICONDUCTOR-LASERS OPTICAL FEEDBACK REFRACTIVE-INDEX WELL GAIN NOISE MODULATION REDUCTION DYNAMICS DIODES Linewidth enhancement factor quantum dot laser feedback sensitivity narrow linewidth