Lee, Seung Min Jang, Yoonseo Yum, Jung Hwan Larsen, Eric S. Lee, Woo Chul Kim, Seong Keun Bielawski, Christopher W. Oh, Jungwoo 2024-01-19T19:01:44Z 2024-01-19T19:01:44Z 2021-09-04 2019-11 0268-1242 https://pubs.kist.re.kr/handle/201004/119420 We present the crystal properties of beryllium oxide (BeO) films on Si (100), GaN (001), and amorphous SiO2 substrates grown by atomic-layer deposition (ALD). Because of the strong bonding interactions intrinsic to beryllium, BeO thin films have been grown in crystalline phases regardless of the substrate type. Transmission electron microscopy revealed crystallized BeO films with small interfacial layers. The epitaxial relationships and domain-matching configurations were confirmed by crystal simulation. Using x-ray diffraction analyses, ALD BeO films with thicknesses of 50 nm showed wurtzite (002) crystal phases for all substrates studied. Raman spectroscopy confirmed that the crystallinity of the BeO film grown on GaN was superior to that on Si and SiO2 substrates. Atomic force microscopy and water contact angle goniometry measurements indicated that the BeO film grown on GaN in a planar mode was due to its low film energy. English IOP PUBLISHING LTD DOMAIN EPITAXY BEHAVIOR GROWTH FILMS GAN Crystal properties of atomic-layer deposited beryllium oxide on crystal and amorphous substrates Article 10.1088/1361-6641/ab4824 1 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.34, no.11 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 34 11 scie scopus 000507379500021 2-s2.0-85075781892 Engineering, Electrical & Electronic Materials Science, Multidisciplinary Physics, Condensed Matter Engineering Materials Science Physics Article DOMAIN EPITAXY BEHAVIOR GROWTH FILMS GAN beryllium oxide atomic-layer deposition domain-matching epitaxy