Kim, Hong Hee Kumi, David O. Kim, Kiwoong Park, Donghee Yi, Yeonjin Cho, So Hye Park, Cheolmin Ntwaeaborwa, O. M. Choi, Won Kook 2024-01-19T19:02:25Z 2024-01-19T19:02:25Z 2021-09-05 2019-10-09 2046-2069 https://pubs.kist.re.kr/handle/201004/119458 In our study, to optimize the electron-hole balance through controlling the electron transport layer (ETL) in the QD-LEDs, four materials (ZnO, ZnGaO, ZnMgO, and ZnGaMgO NPs) were synthesized and applied to the QD-LEDs as ETLs. By doping ZnO NPs with Ga, the electrons easily inject due to the increased Fermi level of ZnO NPs, and as Mg is further doped, the valence band maximum (VBM) of ZnO NPs deepens and blocks the holes more efficiently. Also, at the interface of QD/ETLs, Mg reduces non-radiative recombination by reducing oxygen vacancy defects on the surface of ZnO NPs. As a result, the maximum luminance (L-max) and maximum luminance efficiency (LEmax) of QD-LEDs based on ZnGaMgO NPs reached 43 440 cd m(-2) and 15.4 cd A(-1). These results increased by 34%, 10% and 27% for the L-max and 450%, 88%, and 208% for the LEmax when compared with ZnO, ZnGaO, and ZnMgO NPs as ETLs. English ROYAL SOC CHEMISTRY THIN-FILM TRANSISTORS DOPED ZINC-OXIDE HIGHLY EFFICIENT NANOPARTICLES PERFORMANCE IMPROVEMENT INJECTION Optimization of the electron transport in quantum dot light-emitting diodes by codoping ZnO with gallium (Ga) and magnesium (Mg) Article 10.1039/c9ra06976c 1 RSC ADVANCES, v.9, no.55, pp.32066 - 32071 RSC ADVANCES 9 55 32066 32071 scie scopus 000490133300031 2-s2.0-85073382700 Chemistry, Multidisciplinary Chemistry Article THIN-FILM TRANSISTORS DOPED ZINC-OXIDE HIGHLY EFFICIENT NANOPARTICLES PERFORMANCE IMPROVEMENT INJECTION ZnO quantum dots ZnGaO ZnMgO Zn(Ga, Mg)O quantum dots electron transport layer electroluminescence