Kim, Youngjun Chang, Mincheol Cho, Seongeun Kim, Minkyong Kim, Hyunsik Choi, Eunsoo Ko, Hyungduk Hwang, Jinha Park, Byoungnam 2024-01-19T19:02:33Z 2024-01-19T19:02:33Z 2021-09-05 2019-10-05 0925-8388 https://pubs.kist.re.kr/handle/201004/119465 We report enhancement of mobility and increase in mobile carrier concentration in zinc oxide (ZnO) nanocrystal (NC) field effect transistors (FETs) through the formation of a homo-junction interface using atomic layer deposition (ALD) passivation. An ultrathin ALD-ZnO passivation film deposited on a ZnO NC film not only increased the FET mobility from 4.6x10(-6) to 1.4x10(-4) cm(2)/V but also caused earlier turn-on of the ZnO NC FETs, shifting the threshold voltage from 18.9 to -4.6 V. The enhanced FET mobility and earlier turn-on in the FET are attributed to reduced localized state density on the ZnO NC surface through ALD-ZnO passivation. Passivation of the surface states mitigates carrier depletion in the ZnO NC film through oxygen adsorption on the ZnO surface. We also observed that the presence of saturation of the drain in a high drain-source voltage region depends on the ALD-ZnO passivation and its origin is discussed. (C) 2019 Elsevier B.V. All rights reserved. English ELSEVIER SCIENCE SA LIGHT-EMITTING-DIODES CHARGE-TRANSPORT SURFACE DEPOSITION EFFICIENCY BEHAVIOR DEFECTS DEVICES FILMS SIZE Formation of a functional homo-junction interface through ZnO atomic layer passivation: Enhancement of carrier mobility and threshold voltage in a ZnO nanocrystal field effect transistor Article 10.1016/j.jallcom.2019.06.352 1 JOURNAL OF ALLOYS AND COMPOUNDS, v.804, pp.213 - 219 JOURNAL OF ALLOYS AND COMPOUNDS 804 213 219 scie scopus 000478575100022 2-s2.0-85068402833 Chemistry, Physical Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering Chemistry Materials Science Metallurgy & Metallurgical Engineering Article LIGHT-EMITTING-DIODES CHARGE-TRANSPORT SURFACE DEPOSITION EFFICIENCY BEHAVIOR DEFECTS DEVICES FILMS SIZE Zinc oxide Atomic layer deposition Surface passivation Depletion Field effect transistor