Lee, Sangah Lee, Jaesung Lee, Yoojeong Park, Gi Soon Kim, Min Kyu Min, Byung Koun Shin, Myunghun 2024-01-19T19:03:53Z 2024-01-19T19:03:53Z 2021-09-04 2019-10 1533-4880 https://pubs.kist.re.kr/handle/201004/119541 Copper indium gallium sulfur selenide (Cu(In1-xGax)SeS, CIGS) thin film solar cells are fabricated using a solution-based process, and their defect models are studied through a computer-aided design method. Cu(In-1 x Ga-x)SeS is structured with a graded bandgap by controlling the ambient gas and precursor composition, during the fabrication process. The defects in the CIGS are modeled as two donor-like defects, which are differently distributed as per the CIGS grain size (large and small grains at upper and bottom layers, respectively), whereas those in the cadmium sulfide (CdS)/CIGS interface are modeled as a complex model of both donor-and acceptor-like defects in the CdS, near the interface. By measuring the external quantum efficiency and current density-voltage characteristics, the best-fitting match of the simulated values with the measured values are obtained. The simulation results demonstrate that the defects (defect density of similar to 7x10(18)) in the CdS interface are more serious, compared to the CIGS defects (defect density of similar to 2x10(15) in the bottom), which were initially expected to be more severe because of grain nonuniformity. For increasing the cell efficiency, we establish that the process and material quality need to be further improved not only during CIGS formation using a multistep spin-coated precursor but also during the initial deposition of the CdS buffer. This numerical approach can enable better understanding of the defect behavior in solar cells, and indicate directions for improvement in the fabrication process and device structure, for developing high-efficiency solution-based CIGS solar cells. English AMER SCIENTIFIC PUBLISHERS LOW-COST CU(IN,GA)SE-2 MICROSTRUCTURE GROWTH MODEL Defect Analysis of Solution-Based Process CIGS Thin-Film Solar Cells Using Technology Computer-Aided Design Article 10.1166/jnn.2019.17080 1 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.19, no.10, pp.6601 - 6608 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 19 10 6601 6608 scie 000466046800099 Chemistry, Multidisciplinary Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter Chemistry Science & Technology - Other Topics Materials Science Physics Article CU(IN,GA)SE-2 MICROSTRUCTURE GROWTH MODEL LOW-COST CIGS Solar Cell Solution-Based Process TCAD Simulation Defect Modeling