Kim, Seong Kwang Geum, Dae-Myeong Lim, Hyeong-Rak Kim, Hansung Han, Jae-Hoon Hwang, Do Kyung Song, Jin Dong Kim, Hyung-jun Kim, Sanghyeon 2024-01-19T19:04:00Z 2024-01-19T19:04:00Z 2021-09-05 2019-09 0003-6951 https://pubs.kist.re.kr/handle/201004/119548 In this work, we fabricated n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with a metal-oxide-semiconductor (MOS) interface of Y2O3/In0.53Ga0.47As. We investigated interfacial properties of the gate stack through the H2 ambient annealing process in MOSCAPs. We obtained an extremely low interface trap density of Dit = 1.8 × 1011 cm−2 eV−1. We compared the H2 annealing effect in different gate electrode materials of Ni and Pt. We determined that the Pt electrode was effective in maximizing the impact of H2 annealing. Also, we fabricated In0.53Ga0.47As-on-insulator MOS field-effect-transistors using an optimized annealing process, which showed more stable electrical characteristics than devices through the N2 ambient annealing process. English American Institute of Physics Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode Article 10.1063/1.5111377 1 Applied Physics Letters, v.115, no.14 Applied Physics Letters 115 14 N scie scopus 000489308600029 2-s2.0-85072941154 Physics, Applied Physics Article FIELD-EFFECT TRANSISTORS IMPACT OXIDATION MECHANISM MOBILITY MOSFETS InGaAs FET gate electrode MOS interface